| 摘要 |
PROBLEM TO BE SOLVED: To prevent film thickness from varying among wavers in a batch. SOLUTION: A deposition rate stabilized region on an upstream side (bottom side) of a raw material gas of a boat 11 is divided into three regions A1, A2 and A3. Wafers W in an upstream region A1 from 5.2mm to 52mm are arranged at pitches of 10.4mm. The wafers W in an intermediate region A2 from 57.2mm to 187.2mm are arranged at pitches of 8.7mm. The wafers W in a downstream region A3 from 192.2mm to a void space S are arranged at 5.2mm. By dividing the deposition rate stabilized region into a plurality of regions, and setting the wafer pitch in the upstream side region wider than that in the downstream side region, the deposition rate of the wafer in the region where the pitch is wider is made higher than that of the wafer in the region where the pitch is narrower, so that the deposition rates of the wafer groups in each region can be controlled so as to be equal to one another. Consequently the films are deposited into uniform thickness among the wafers in the batch. COPYRIGHT: (C)2005,JPO&NCIPI
|
