| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which alleviates the possibility of disconnection remarkably about an electric connection to a memory peripheral circuit in a cross point type ferroelectric RAM, and to provide a method for manufacturing the same. SOLUTION: An interlayer insulating film 15 and a silicon nitride film 16 are laminated on a predetermined region of a semiconductor substrate 11 surrounded by an element isolation insulating film 12, and a lower electrode 17 is formed in a stripe shape on this silicon nitride film 16. An upper electrode 19 is formed in a stripe shape above the lower electrode 17 so as to intersect the lower electrode 17. A ferroelectric thin film 18 is arranged between the lower electrode 17 and the upper electrode 19, the intersection area of both the electrodes is arranged in a matrix shape in a memory cell structure to constitute a memory 20. An interlayer insulating film 21 is formed to cover the memory part 20. The thickness of the interlayer insulating film L1 can be suppressed to low. COPYRIGHT: (C)2005,JPO&NCIPI
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