SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To form an insulating film superior in interfacial properties with a silicon substrate and to provide a semiconductor device of high performance and a manufacturing method of the device. SOLUTION: A silicon oxide film 8 as a first insulating film is formed on the silicon substrate 1, and a hafnium silica film 9 as a second insulating film is formed on it. Film thickness of the silicon oxide film 8 is not more than 1nm and oxide content is not more than 30%. The silicon oxide film can be a silicon oxynitride film, or can be a silicon nitride film whose film thickness is not more than 1nm and whose oxygen content is less than 0.1 atom%. COPYRIGHT: (C)2005,JPO&NCIPI