SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a technology for improving the high frequency power gain of an LDMOS. SOLUTION: The distance from the surface of a passivation film covering an electrode pad to the rear face of a silicon substrate is set to be not more than 200μm, or a groove 36 is formed in depth of not less than 2μm in which an insulating film or a conductor is embedded between a part where p-type impurity is diffused when a p+-type source punching layer 9 is formed and a channel region of third LDMOSTr3from a surface of a semiconductor layer 2b to the silicon substrate 2a. Spreading of the p+-type source punching layer 2 to the channel region is suppressed by the groove 36. Thus, inductance or resistance of a source are dropped and the high frequency power gain is improved. COPYRIGHT: (C)2005,JPO&NCIPI