| 摘要 |
PROBLEM TO BE SOLVED: To provide a porous film-forming material capable of forming a coated film having proper uniform thickness, excellent in heat resistance, scarcely causing crack and further, excellent in a dielectric constant property as a interlaminar insulating film in a semiconductor element, etc. SOLUTION: The porous insulating film-forming material comprises (A) a resin of a block copolymer having a block (A-I) having a structure represented by general formula (I) and a block (A-II) having general formula (II) [wherein Y<SB>1</SB>, Y<SB>2</SB>, Ar<SB>1</SB>and Ar<SB>2</SB>are each a divalent organic group containing an aromatic ring or a divalent organic group containing a silicon atom; combination of Y<SB>1</SB>and Ar<SB>1</SB>is not the same as a combination of Y<SB>2</SB>and Ar<SB>2</SB>; m and n represent mol percentage in a polymer of a recurring unit and when structure represented by a plurality of formulas (I) and/formulas (II) exist, a plurality of n values and a plurality of m values may be different; the sum of n is 10-90 and (the sum of m)+(the sum of n)=100] and (B) at least one kind of component selected from a compound (B-1) having 250°C-450°C boiling point or decomposition point and hollow fine particles (B-2). COPYRIGHT: (C)2005,JPO&NCIPI
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