发明名称 Maintaining photoresist planarity at hole edges
摘要 Maintaining photoresist thickness and uniformity over a substrate that includes various cavities presents problems, such as preventing distortion of features in the resist image close to cavity edges. These problems have been overcome by laying down the photoresist as two separate layers. The first layer is used to eliminate or reduce problems associated with the presence of the cavities. The second layer is processed in the normal way and does not introduce distortions close to a cavity's edge. A first embodiment introduces some liquid into the cavity before laying down the first layer while the second embodiment etches away part of the first layer before applying the second one. Application of the process to the formation of a cantilever that overhangs a cavity is also described.
申请公布号 US2004214112(A1) 申请公布日期 2004.10.28
申请号 US20030421188 申请日期 2003.04.23
申请人 TAIWAN SEMICONDUTOR MANUFACTURING CO. 发明人 CHENG SU-JEN;JANG BOR-PING;WANG CHUN-CHIEH;GAU JY-JIE
分类号 G03F7/00;G03F7/16;G03F7/26;H01L21/312;(IPC1-7):G03F7/26 主分类号 G03F7/00
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