| 摘要 |
There are provided a first insulating film over a semiconductor substrate, a capacitor formed on the first insulating film and having a lower electrode, a ferroelectric film, and an upper electrode, a capacitor-protection insulating film formed on the capacitor to apply a tensile stress of more than 2.0x10<9 >dyn/cm<2 >to the capacitor, and a second insulating film formed on the capacitor-protection insulating film to apply a compressive stress of more than 2.6x10<9 >dyn/cm<2 >to the capacitor.
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