| 摘要 |
A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer 6 again composed of an MgxZn1-xO-type oxide semiconductor, and an n-type cladding layer 3. On the p-type cladding layer 6 of the light emitting layer portion 9, a light extraction layer 7 is configured using an oxide, where the light extraction layer 7 has a refractive index at a dominant emission wavelength of light extracted from the active layer 5 smaller than that of the cladding layers 3,6. This makes it possible to efficiently extract the light emitted from the light emitting layer portion 9 to the external of the light emitting device 100. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.
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