发明名称 |
Process for manufacturing MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer |
摘要 |
A MOS semiconductor device formed on a substrate of a first conductivity type is provided. The device includes active zones for elementary active elements, and at least one inactive zone suitable for electric signal input or output. The substrate is connected with the drain terminal of the device, and at least one of the elementary active elements includes a body region of a second conductivity type that is connected with the source terminal of the device. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The silicon oxide layer has alternating first zones and second zones that are contiguous to each other, with the first zones having a greater thickness than the second zones.
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申请公布号 |
US2004211984(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20040851599 |
申请日期 |
2004.05.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
SCHILLACI ANTONINO;PONZIO PAOLA MARIA |
分类号 |
H01L21/336;H01L29/08;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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