| 摘要 |
PURPOSE: A row redundancy circuit is provided to assure space of a memory device by reducing the number of main word lines by corresponding a number of redundant sub word lines to one redundant main word line, and to reduce current consumption related with the generation of a boosting signal. CONSTITUTION: According to the row redundancy circuit of a semiconductor memory comprising a redundant main word line and a redundant sub word line, a fuse box group array(100) detects whether a row address for redundancy is applied, by comprising fuse box groups comprising at least two fuse boxes. A redundant row decoder(200) enables one redundant main word line selectively corresponding to a plurality of redundant sub word lines. And a redundant sub row decoder(300) enables a boosting signal to drive redundant sub word lines selectively and disables the enabled boosting signal only when a new row address is applied.
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