| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce the formation of a void in a wiring layer, and restrain the growth of the void in the wiring widthwise direction when a void is further formed. SOLUTION: The semiconductor device is provided with a wiring layer 13A which is formed on a semiconductor substrate and has a plurality of wirings 13B divided in a direction rectangular to a drawing direction, and a plurality of slit type non-wiring layers 14 which are formed along the drawing direction between the plurality of divided wirings 13B in the wiring layer 13A. Widths of the divided wirings 13B are smaller than a grain size constituting the wiring layer 13A. COPYRIGHT: (C)2005,JPO&NCIPI |
