| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device having such a configuration as to improve the impairment of images resulting from a dark current by remarkably reducing the indraft amount of the dark current at the time of the integration of signal charges, and to provide its control method. SOLUTION: The solid-state imaging device comprises a semiconductor substrate of a first conductivity type; a first semiconductor region 14 of the first conductivity type which is formed in a surface layer of a photo diode region for generating signal charge of the semiconductor substrate, and is doped with dopants of the same conductivity type as that of the semiconductor substrate at a higher concentration than in the semiconductor substrate; a second semiconductor region 13 of a second conductivity type which is formed inside the semiconductor substrate in such a manner as to be in contact with the bottom face of the first semiconductor region, and is doped with dopants of the opposite conductivity type from that of the semiconductor substrate; a gate 12 into which control signals of a transistor region for transferring signal charges which is located adjacently to a photo diode region for generating signal charge are inputted; and a voltage generation circuit 16 for generating a prescribed positive voltage applied to the gate of the transistor for transferring signal charge at the time of integration of signal charges. COPYRIGHT: (C)2005,JPO&NCIPI
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