发明名称 SINGLE CRYSTAL PRODUCING METHOD
摘要 <p>A method for producing a single crystal by a Czochralski method in which a magnetic field is applied. The method is characterized in that the minimum magnetic field strength in the melt placed in the crucible is in the range above 2,000 G, the maximum magnetic field strength in the melt is in the range bellow 6,000 G, the maximum magnetic field gradient which is the quotient of the division of the difference between the maximum magnetic field strength and the minimum magnetic field strength by the distance is in the range below 55 G/cm, and a single crystal is pulled up. Thus, a high-quality single crystal can be produced with a high productivity.</p>
申请公布号 WO2004092456(A1) 申请公布日期 2004.10.28
申请号 WO2004JP04552 申请日期 2004.03.30
申请人 SHIN-ETSU HANDOTAI CO., LTD.;SONOKAWA, SUSUMU;HOSHI, RYOJI;MORI, TATSUO 发明人 SONOKAWA, SUSUMU;HOSHI, RYOJI;MORI, TATSUO
分类号 C30B29/06;C30B15/00;C30B15/22;C30B15/30;C30B30/04;(IPC1-7):C30B15/22 主分类号 C30B29/06
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