发明名称 |
ROW REDUNDANCY CIRCUIT AND REPAIR METHOD, ESPECIALLY REDUCING THE NUMBER OF WORD LINES |
摘要 |
PURPOSE: A row redundancy circuit and a repair method are provided to reduce the number of word lines by matching a number of redundant sub word lines to one redundant main word line. CONSTITUTION: According to the row redundancy circuit of a semiconductor memory comprising a redundant main word line and a redundant sub word line, a fuse box group array(100) detects whether a row address for redundancy is applied by comprising fuse box groups comprising at least two fuse boxes. A redundant row decoder(200) enables one redundant main word line selectively corresponding to a plurality of redundant sub word lines. And a redundant sub row decoder(300) generates a boosting signal to drive redundant sub word lines per group selectively.
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申请公布号 |
KR20040091274(A) |
申请公布日期 |
2004.10.28 |
申请号 |
KR20030025052 |
申请日期 |
2003.04.21 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, CHANG HYEOK |
分类号 |
G11C7/00;G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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