发明名称 ROW REDUNDANCY CIRCUIT AND REPAIR METHOD, ESPECIALLY REDUCING THE NUMBER OF WORD LINES
摘要 PURPOSE: A row redundancy circuit and a repair method are provided to reduce the number of word lines by matching a number of redundant sub word lines to one redundant main word line. CONSTITUTION: According to the row redundancy circuit of a semiconductor memory comprising a redundant main word line and a redundant sub word line, a fuse box group array(100) detects whether a row address for redundancy is applied by comprising fuse box groups comprising at least two fuse boxes. A redundant row decoder(200) enables one redundant main word line selectively corresponding to a plurality of redundant sub word lines. And a redundant sub row decoder(300) generates a boosting signal to drive redundant sub word lines per group selectively.
申请公布号 KR20040091274(A) 申请公布日期 2004.10.28
申请号 KR20030025052 申请日期 2003.04.21
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, CHANG HYEOK
分类号 G11C7/00;G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C7/00
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