发明名称 |
Cleaning solution for photoresist patterns used for manufacture of semiconductor device, comprises water as solvent, and surfactant of phosphate-alcohol amine salt as an additive |
摘要 |
<p>A cleaning solution for photoresist patterns comprises water as a solvent; and surfactant of phosphate-alcohol amine salt as an additive. A cleaning solution for photoresist patterns comprises water as a solvent; and a compound formula R-[-O-(-CH 2-) a-]-O-P(O)(OH)-O ->NH +>[-CH 2-(-CH 2-) x-OH][-CH 2-(-CH 2-) y-OH][-CH 2-(-CH 2-) z-OH] (1) as a surfactant. R : 2-20C alkyl or 6-25C alkyl aryl; x,y,z : 0-10; a : 2-3; b : 2-50. Independent claims are also included for: (1) formation of a photoresist pattern, comprising preparing a semiconductor substrate on which an underlying layer is formed; coating a photoresist on the underlying layer to form a photoresist film; exposing the photoresist film to light; developing the exposed photoresist film; and cleaning the resulting structure using the cleaning solution; and (2) a semiconductor device manufactured by the method.</p> |
申请公布号 |
DE10356178(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
DE2003156178 |
申请日期 |
2003.12.02 |
申请人 |
HYNIX SEMICONDUCTOR INC., ICHEON |
发明人 |
LEE, GEUN SU;BOK, CHEOL KYU;HWANG, YOUNG SUN;LEE, SUNG KOO;MOON, SEUNG CHAN;SHIN, KI SOO |
分类号 |
C11D1/34;C11D3/30;C11D11/00;G03F7/32;(IPC1-7):C09D9/04;B01F17/14;G03F7/40 |
主分类号 |
C11D1/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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