| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device based on a new driving method by which writing can be performed surely and a writing method of the magnetic memory device. SOLUTION: A pair of loop type Write-in lines 6X<SB>n</SB>, 6Y<SB>n</SB>form four parallel parts. Magnetic resistance effect elements 12A, 12B arranged at each parallel parts of an upper stage and a lower stage constitute respectively a storage cell 12Ev and a storage cell 12Od. When a current of a direction from current drives 123<SB>n</SB>, 133<SB>n</SB>to drive point A→B is made to flow, in a current of the writing lines 6X<SB>n</SB>, 6Y<SB>n</SB>, mutual directions are orientation gathered at the parallel part of the storage cell 12Ev, but mutual directions are made reverse directions each other at the parallel part of the storage cell 12Od. In the storage cell 12Ev, inductive magnetic fields are strengthened mutually, magnetization of each magneto-sensitive layer of the magnetic resistance effect elements 12A, 12B are anti-parallel mutually. In the storage cell 12Od, inductive magnetic fields negate effect mutually. COPYRIGHT: (C)2005,JPO&NCIPI
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