TCAM device and operating method

摘要

Each ternary content addressable memory (TCAM) cell (MC11) consists of two SRAM cells and a comparator. The comparator has NMOS transistors (Q5,Q7) connected between the match line (ML) and ground through another NMOS transistors (Q6,Q8), respectively. Transistors (Q5,Q7) are gated by the signals from memory cells and the transistors (Q6,Q8) are gated by the signals from search line pair (SL1,/SL1). An independent claim is also included for method of operating ternary content addressable memory (TCAM) device.