| 摘要 |
FIELD: radiation material science. ^ SUBSTANCE: invention is meant for changing mechanical, chemical, and electrophysical properties of subsurface layers of metals, alloys, semiconductors, dielectrics, and other materials by coating them or modifying their subsurface layers by ion implantation. Plasma is induced by continuous vacuum-arch discharge, after which ions therefrom are accelerated in the pulse-periodic mode and samples are irradiated alternatively by ions and plasma utilizing irradiation dose ratio control. In different process stages, long-pulse and/or short-pulse accelerated electron beam is formed from arch-discharge plasma, ion streams being characterized by duration 100-400 mcs and filling 1-8% and/or 0.1-10 mcs and 8-99%, respectively. Long-pulse electron beam is formed by imposing accelerating voltage between arch source elements and short-pulse one by exposing samples to the effect of negative-polarity voltage having amplitude within a range of 100 to 104 v, pulse duration between 0.1 and 10 mcs, and pulse recurrence rate 8.103 to 9.9.106 pulse/s. In order to expand assortment of coatings, samples are irradiated by additional metal and gas plasma sources. ^ EFFECT: enabled conduction of process in a single apparatus and applying conducting and non-conducting coatings onto metals and dielectrics. ^ 18 cl, 9 dwg, 3 ex |
