| 摘要 |
A method of producing a SOI MOSFET which includes a fully depleted channel region of a first conductivity type formed in a top semiconductor layer disposed on an insulative substrate, source/drain regions of a second conductivity type formed to sandwich the channel region and a gate electrode formed on the channel region with intervention of a gate insulating film, the method comprises: forming the channel region by setting an impurity concentration of channel edge regions of the channel region adjacent to the source/drain regions higher than an impurity concentration of a channel central region of the channel region, and setting a threshold voltage Vth0 of the channel central region and a threshold voltage Vthedge of the channel edge regions so that a change of the threshold voltage Vth0 with respect to a change of the thickness of the top semiconductor layer and a change of the threshold voltage Vthedge with respect to the change of the thickness of the top semiconductor layer are of opposite sign. <IMAGE> |
