Lithographic processing method and device manufactured thereby

摘要

A substrate is irradiated with radiation beam patterned in accordance with sub-patterns (31,32) of each feature of a desired pattern. Resist processing is performed to expose radiation sensitive layer of substrate to form an intermediate pattern. A supplementary resist processing is performed to shrink features of the intermediate pattern to match with size of corresponding features of desired pattern. An independent claim is also included for integrated circuit manufactured using lithographic technique.