METHOD OF MANUFACTURING MRAM DEVICE USING FIRST AND SECOND PLASMA

摘要

PURPOSE: A method of manufacturing an MRAM(Magneto-resistive Random Access Memory) is provided to perform effectively an etching process on a magnetic material by using properly a first plasma and a second plasma. CONSTITUTION: A substrate with a plurality of metallic films and a patterned mask is provided. A first plasma containing a first gas mixture is generated. A first metallic film out of the plurality of metallic films is etched by using the first plasma(108). At this time, metallic residues are formed on the substrate. The first plasma is replaced with a second plasma containing an inert gas. The metallic residues are removed from the substrate by using the second plasma(110).