发明名称 |
Substrate for semiconductor light-emitting element, semiconductor light-emitting element and its fabrication |
摘要 |
A group III nitride underlayer including at least Al, having a dislocation density of <=1x10<SUP>11</SUP>/cm<SUP>2 </SUP>and a (002) plane X-ray rocking curve half-width value of <=200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is >=50% and in which a carrier density is >=1x10<SUP>16</SUP>/cm<SUP>3</SUP>. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of >=50%. |
申请公布号 |
EP1471582(A1) |
申请公布日期 |
2004.10.27 |
申请号 |
EP20030290809 |
申请日期 |
2003.03.31 |
申请人 |
NGK INSULATORS, LTD.;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
HORI, YUJI;ODA, OSAMU;TANAKA, MITSUHIRO;DAUDIN, BRUNO;MONROY, EVA |
分类号 |
C23C14/06;C23C16/34;H01L21/205;H01L33/00;H01L33/06;H01L33/32 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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