发明名称 Bipolar transistor and method of producing same
摘要 <p>A base contact pad mesa portion (PBM) is formed on a substrate (10), at a height same as the height of a base layer (13). A conductive layer (17) has a base contact pad electrode (17b) formed on the PBM, apart from the edges of top surface of PBM. An independent claim is also included for semiconductor device manufacturing method.</p>
申请公布号 EP1471580(A2) 申请公布日期 2004.10.27
申请号 EP20040291043 申请日期 2004.04.22
申请人 SONY CORPORATION 发明人 KOBAYASHI, JUNICHIRO
分类号 H01L21/331;H01L29/423;H01L29/732;H01L29/737;(IPC1-7):H01L29/73 主分类号 H01L21/331
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