FLASH MEMORY DEVICE CAPABLE OF PREVENTING PROGRAM DISTURB ACCORDING TO PARTIAL PROGRAM, IN WHICH COLUMNS ARE DIVIDED INTO TWO COLUMN REGIONS

摘要

PURPOSE: A flash memory device is provided to mitigate program voltage disturb according to a partial program by not applying a program voltage and a path voltage to word lines of a memory block corresponding to a sensing and latch block. CONSTITUTION: An array has memory cells arranged in rows and columns. The columns are divided into at least two column regions(110R,110L) and each row is divided into two electrically-insulated word lines in the column regions. A register latches data to be programmed in the array. Gate circuits(190L,190R) transfer data to be programmed to the register in response to column address information. And a judgement unit judges which column region the data loaded in the register belongs to during a program operation. And a driving unit(140) selects one of the rows in response to row address information, and drives one or all of the word lines of the selected row with a program voltage.