发明名称 Single mode vertical cavity surface emitting laser using photonic crystals with a central defect
摘要 A vertical cavity surface emitting laser (VCSEL) using photonic crystals with a central defect. At least one of the mirror layers of a VCSEL includes a photonic crystal with a central defect. The central defect, which is surrounded by a periodic structure of holes or cavities, permits laser light to propagate and exit the VCSEL. Semi-insulating regions are formed in the active region such that when cavities are drilled in the photonic crystal and penetrate the active region, the cavities pass through the semi-insulating regions. This reduces the surface recombination that would otherwise occur in the active region and prevents the threshold current from increasing. The photonic crystal with a central defect has a reflectivity that is wavelength dependent. The VCSEL thus emits a single mode.
申请公布号 US6810056(B1) 申请公布日期 2004.10.26
申请号 US20020256001 申请日期 2002.09.26
申请人 FINISAR CORPORATION 发明人 LIPSON JAN;LENOSKY THOMAS;DENG HONGYU
分类号 H01S5/10;H01S5/183;(IPC1-7):H01S5/00;H01S3/082 主分类号 H01S5/10
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