发明名称 |
High-k gate dielectric with uniform nitrogen profile and methods for making the same |
摘要 |
High-k transistor gate structures and fabrication methods therefor are provided, wherein a gate dielectric interface region near a semiconductor substrate is provided with very little or no nitrogen, while the bulk high-k dielectric is provided with a uniform nitrogen concentration.
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申请公布号 |
US6809370(B1) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030632230 |
申请日期 |
2003.07.31 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
COLOMBO LUIGI;QUEVEDO-LOPEZ MANUEL;CHAMBERS JAMES J.;VISOKAY MARK R.;ROTONDARO ANTONIO L. P. |
分类号 |
H01L21/336;H01L27/108;H01L29/78;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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