发明名称 Accelerated ion beam generator
摘要 A beam of accelerated ions (111) is produced from a quiescent plasma (19) created by diffusing a heated primary plasma (15) through an accelerator/homogenizer structure (17) having a uniform voltage potential VB and a total surface area ARF. The RF-conductive, dielectric coated surfaces of the accelerator/homogenizer structure are quasi-uniformly dispersed throughout the primary plasma. The quiescent plasma has a generally homogenous preselected plasma potential VPA approximately equal to VB. An RF-grounded structure (112) having a total ground surface area AG, wherein ARF>AG, attracts ions from the quiescent plasma to produce the accelerated ion beam.
申请公布号 US6809310(B2) 申请公布日期 2004.10.26
申请号 US20030351816 申请日期 2003.01.27
申请人 CHEN LEE 发明人 CHEN LEE
分类号 H05H3/02;(IPC1-7):H05H3/02 主分类号 H05H3/02
代理机构 代理人
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