发明名称 |
Method of semiconductor device isolation |
摘要 |
a method of semiconductor device isolation, which can minimize an design rule of trenches comprising the steps of providing a substrate where a device isolation region was defined; removing the device isolation region of the substrate using a photolithography process to form trenches; implanting ions into the substrate having the trenches to form an impurity layer having a uniform depth relative to the surface of the substrate; thermally oxidizing the substrate having the impurity layer to form an oxide film; and removing the oxide film.
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申请公布号 |
US6809006(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20020242219 |
申请日期 |
2002.09.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM BONG SOO;KIM JEONG BOK |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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