| 发明名称 |
Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices |
| 摘要 |
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein the Schottky electrode contains silicon.
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| 申请公布号 |
US6809352(B2) |
申请公布日期 |
2004.10.26 |
| 申请号 |
US20020329675 |
申请日期 |
2002.12.27 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NISHII KATSUNORI;IKEDA YOSHITO;MASATO HIROYUKI;INOUE KAORU |
| 分类号 |
H01L21/285;H01L21/338;H01L23/48;H01L29/20;H01L29/47;H01L29/812;H01L31/00;H01L33/32;H01L33/40;(IPC1-7):H01L31/032;H01L27/095 |
主分类号 |
H01L21/285 |
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