发明名称 Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof
摘要 A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.
申请公布号 US6809953(B2) 申请公布日期 2004.10.26
申请号 US20030440277 申请日期 2003.05.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TOYODA KENJI;UEDA MICHIHITO;MORIMOTO KIYOSHI;MORITA KIYOYUKI;IWATA TORU;KAJIWARA JUN
分类号 H02M3/07;(IPC1-7):G11C11/22;G11C11/24 主分类号 H02M3/07
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