发明名称 |
Process for fabricating a microelectromechanical structure |
摘要 |
A process is disclosed for forming a microelectromechanical (MEM) structure on a substrate having from 5 to 6 or more layers of deposited and patterned polysilicon. The process is based on determining a radius of curvature of the substrate which is bowed due to accumulated stress in the layers of polysilicon and a sacrificial material used to buildup the MEM structure, and then providing one or more stress-compensation layers on a backside of the substrate to flatten the substrate and allow further processing.
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申请公布号 |
US6808952(B1) |
申请公布日期 |
2004.10.26 |
申请号 |
US20020236631 |
申请日期 |
2002.09.05 |
申请人 |
SANDIA CORPORATION |
发明人 |
SNIEGOWSKI JEFFRY J.;KRYGOWSKI THOMAS W.;MANI SEETHAMBAL S.;HABERMEHL SCOTT D.;HETHERINGTON DALE L.;STEVENS JAMES E.;RESNICK PAUL J.;VOLK STEVEN R. |
分类号 |
B81B3/00;B81C1/00;H01L21/00;(IPC1-7):H01L21/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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地址 |
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