SEMICONDUCTOR MEMORY DEVICE CAPABLE OF MONITORING ELECTRICAL CHARACTERISTICS IN INPUT/OUTPUT SENSE AMPLIFIER WITHOUT CHANGING METAL OPTION MASK, IN WHICH AC CHARACTERISTICS IS CONTROLLED BY APPLYING MRS SIGNAL WITHOUT GROUNDING

摘要

PURPOSE: A semiconductor memory device is provided which is capable of monitoring electrical characteristics in an input/output sense amplifier without changing a metal option mask and also controls delay characteristics and current gain without regard to the position in a chip of the memory cell array. CONSTITUTION: A plurality of load transistors(Q1-Q8) are installed between input/output line pair(IOi,IOBi), and transfer transistors(Q10-Q12,Q13-Q15) are installed at each input/output line pair. A mode register set(MRS) signal is connected to gates of the load transistors and gates of the transfer transistors correspondingly. That is, AC characteristics is controlled programmably by applying the MRS signal to a corresponding line, without being connected to a ground.