发明名称 |
Vertical nitride read-only memory cell and method for forming the same |
摘要 |
A method for forming a vertical nitride read-only memory cell. A substrate having at least one trench is provided. A first conductive layer is formed in the lower trench and insulated from the substrate to serve as a source line. A first doping region is formed in the substrate adjacent to the top of the first conductive layer. A first insulating layer is formed on the first conductive layer. A second doping region is formed in the substrate adjacent to the top of the trench. A second insulating layer is formed over the sidewall of the trench and on the first insulating layer to serve as a gate dielectric layer. A second conductive layer is formed in the upper trench to serve as a control gate. A vertical nitride read-only memory cell is also disclosed.
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申请公布号 |
US6808987(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030460796 |
申请日期 |
2003.06.12 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HSIAO CHING-NAN;CHUANG YING-CHENG |
分类号 |
H01L21/336;H01L21/8246;H01L27/115;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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