发明名称 |
Semiconductor power converting apparatus |
摘要 |
A semiconductor power converting apparatus including at least one series arrangement of MOS control semiconductor devices such as Insulator-gate Bipolar Transistors (IGBTs) or metal oxide MOS transistors which are respectively applied with a gate voltage under the control of corresponding a driver. The driver contains a supply line having a higher potential than a gate voltage of an IGBT coupled thereto when the IGBT is in a steady ON state, and is such that is causes an increase of the gate voltage of the IGBT in accordance with the current of the supply line when a potential difference between the power supply line and an emitter of the IGBT is constant and the collector voltage thereof exceeds a predetermined value under an ON state of the IGBT.
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申请公布号 |
US6809561(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030638400 |
申请日期 |
2003.08.12 |
申请人 |
HITACHI, LTD. |
发明人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
分类号 |
H02M1/00;H03K17/08;H03K17/082;H03K17/10;H03K17/56;(IPC1-7):H03K3/00 |
主分类号 |
H02M1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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