发明名称 Semiconductor integrated circuit device
摘要 In a circuit for converting an input signal Data1 of high frequency to an output signal Data4 of low frequency, a signal of the frequency band (for example, 10 GHz to 2.5 GHz) which can be processed only with a bipolar ECL circuit is processed with a bipolar ECL circuit. After the frequency of signal up to the maximum frequency which can be processed with a CMOS circuit is lowered, the signal is inputted to the CMOS circuit via a level conversion circuit in order to lower the frequency (for example, 2.5 GHz to 1.25 GHz). Thereby, power consumption of the semiconductor integrated circuit device, particularly the device including the Bi-CMOS circuit can be lowered while high-seed processing characteristic in the signal process of the circuit is maintained.
申请公布号 US6809562(B2) 申请公布日期 2004.10.26
申请号 US20030411122 申请日期 2003.04.11
申请人 HITACHI, LTD. 发明人 WADA SHINICHIRO;UENO SATOSHI;KAJIYAMA SHINYA
分类号 H01L27/06;H01L21/8249;H03K19/08;H03M9/00;(IPC1-7):H03B19/00 主分类号 H01L27/06
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