发明名称 Method for improved processing and etchback of a container capacitor
摘要 A capacitor having improved size for enhanced capacitance and a method of forming the same are disclosed. In one embodiment, the capacitor is a stacked container capacitor used in a dynamic random access memory circuit. The capacitor provides a capacitor that has high storage capacitance which provides an increased efficiency for a cell without an increase in the size of the cell.
申请公布号 US6809918(B2) 申请公布日期 2004.10.26
申请号 US20030735897 申请日期 2003.12.16
申请人 MICRON TECHNOLOGY, INC. 发明人 CARSTENSEN ROBERT K.
分类号 H01L21/02;H01L21/8242;(IPC1-7):H01G4/228 主分类号 H01L21/02
代理机构 代理人
主权项
地址