发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
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申请公布号 |
US6809000(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20010797987 |
申请日期 |
2001.03.05 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAO KEISAKU;MATSUDA AKIHIRO;IZUTSU YASUFUMI;ITO TOYOJI;MIKAWA TAKUMI;NASU TORU;NAGANO YOSHIHISA;TANAKA KEISUKE;KUTSUNAI TOSHIE |
分类号 |
H01L21/02;(IPC1-7):H01L21/20;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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