发明名称 |
Control circuitry for a non-volatile memory |
摘要 |
Control circuitry for applying voltages to a memory circuit. In accordance with this invention, row circuitry applies either a high voltage or a low voltage to a memory cell based on the operation to be performed and column circuitry applies a high or a low voltage to the memory cell based on the operation to be performed.
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申请公布号 |
US6809965(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20020247767 |
申请日期 |
2002.09.18 |
申请人 |
VIRTUAL SILICON TECHNOLOGY, INC. |
发明人 |
ROSENDALE GLEN ARNOLD |
分类号 |
G11C7/10;G11C8/08;G11C16/12;(IPC1-7):G11C16/04 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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