发明名称 Control circuitry for a non-volatile memory
摘要 Control circuitry for applying voltages to a memory circuit. In accordance with this invention, row circuitry applies either a high voltage or a low voltage to a memory cell based on the operation to be performed and column circuitry applies a high or a low voltage to the memory cell based on the operation to be performed.
申请公布号 US6809965(B2) 申请公布日期 2004.10.26
申请号 US20020247767 申请日期 2002.09.18
申请人 VIRTUAL SILICON TECHNOLOGY, INC. 发明人 ROSENDALE GLEN ARNOLD
分类号 G11C7/10;G11C8/08;G11C16/12;(IPC1-7):G11C16/04 主分类号 G11C7/10
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