| 摘要 |
PURPOSE: To provide a Cu-Ni-Si alloy for electronic materials in which high strength and high conductivity are compatible with each other, wherein the alloy is desirable as a copper alloy for electronic materials including lead frame, terminal and connector due to its superior strength and conductivity, and a method for producing the Cu-Ni-Si alloy. CONSTITUTION: In a copper radical alloy containing 1.0 to 4.5 mass% of Ni, 0.25 to 1.5 mass% of Si and the balance of Cu and inevitable impurities, the Cu-Ni-Si alloy is characterized in that if mass concentration values of Ni and Si are represented as £Ni|and£Si|, a mass concentration ratio (£Ni|/£Si|) of Ni and Si is 4 to 6 , and χ defined in the following expression 1 is 0.1 to 0.45: Expression 1|(£Ni|-4χ)¬2(£Si|-χ)=1/8, wherein the Cu-Ni-Si alloy contains 0.05 to 0.3 mass% of Mg, and wherein the Cu-Ni-Si alloy contains the total amount of 0.005 to 2.0% of one or more elements selected from Zn, Sn, Fe, Ti, Zr, Cr, Al, P, Mn, Ag and Be. |
