发明名称 |
Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same |
摘要 |
The present invention relates to a sapphire monocrystalline body to be used as the substrate for a semiconductor for electronic parts or component parts, and to a monocrystalline sapphire substrate. The invention also relates to a method for working the same. The invention is based cleavage along the plane R of the sapphire monocrystalline body which cleavage is easy to accomplish and provides a surface high in precision. The inventive process includes forming linear crack parallel or vertical to a reference plane of the substrate, with a microcrack line as a starting point, to develop a crack in a thickness direction of the body.
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申请公布号 |
US6809010(B1) |
申请公布日期 |
2004.10.26 |
申请号 |
US19970808315 |
申请日期 |
1997.02.28 |
申请人 |
KYOCERA CORP |
发明人 |
KINOSHITA HIROYUKI;UMEHARA MOTOHIRO |
分类号 |
C30B33/00;H01S5/02;H01S5/32;H01S5/323;(IPC1-7):H01L21/78;H01S5/00 |
主分类号 |
C30B33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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