| 摘要 |
A double-slope MOS active pixel sensor disposed on a semiconductor substrate has a first light-to-output-voltage transfer gain up to a first charge accumulation threshold, has a second light-to-output-voltage transfer gain lower than the first light-to-output-voltage transfer gain above the light accumulation threshold, and comprises first and second photodiodes each having a first terminal coupled to a fixed potential and a second terminal. The second photodiode is smaller than the first photodiode. First and second semiconductor reset switches each have a first terminal coupled respectively to the second terminal of the first and second photodiodes and a second terminal coupled respectively to first and second reset potentials that reverse bias the photodiodes. First and second semiconductor amplifiers each have an input coupled respectively to the second terminals of the first and second photodiodes and have their outputs coupled together. The first and second semiconductor reset switches each have a control element coupled to a control circuit for selectively activating the first and second semiconductor reset switches.
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