Low electrical resistance n-type mirror for optoelectronic devices

摘要

An optoelectronic device having one or more DBR mirrors having a low voltage drop across the mirror layers and a high reflectivity for emission at a nominal wavelength of 1300 nm below, at and above room temperature. The low resistance DBR may be used as a top output mirror of a tunnel junction VCSEL that reduces resistance and optical losses by reducing the amount of p-type material within the device.