发明名称 Method of processing solution on a substrate
摘要 A method for forming on a substrate an electronic device including an electrically conductive or semiconductive material in a plurality or regions, the operation of the device utilising current flow from a first region to a second region, the method comprising: forming a mixture by mixing the material with a liquid; forming on the substrate a confinement structure including a first zone in a first area of the substrate and a second zone in a second area of the substrate, the first zone having a greater repellence for the mixture than the second zone, and a third zone in a third area of the substrate spaced from the second area by the first area, the first zone having a greater repellence for the mixture than the third zone, and depositing the material on the substrate by applying the mixture over the substrate whereby the deposited material may be confined by the relative repellence of the first zone to spaced apart regions defining the said first and second regions of the device and being electrically separate in their plane by means of the relative repellence of the first zone and to be absent from the first area of the substrate so as to resist the flow across the first zone of electrical current between the spaced a part regions of the deposited material.
申请公布号 US6808972(B2) 申请公布日期 2004.10.26
申请号 US20020175909 申请日期 2002.06.21
申请人 PLASTIC LOGIC LIMITED;SEIKO EPSON CORPORATION 发明人 SIRRINGHAUS HENNING;KAWASE TAKEO;FRIEND RICHARD HENRY
分类号 B41J2/01;B05D1/36;B05D5/12;B41J2/05;H01L21/28;H01L21/288;H01L21/311;H01L21/336;H01L21/768;H01L27/32;H01L29/417;H01L29/786;H01L51/00;H01L51/05;H01L51/10;H01L51/30;H01L51/40;H01L51/52;(IPC1-7):H01L21/823 主分类号 B41J2/01
代理机构 代理人
主权项
地址