| 摘要 |
A semiconductor laser includes an active layer stripe including a first semiconductor layer, an active layer, and a second semiconductor layer that are laminated in that order on a substrate and formed into a stripe-shape; a burying layer in which the active layer stripe is buried; and a contact layer formed on the burying layer. The semiconductor laser further includes a monitor stripe that is formed in parallel to the active layer stripe and is composed of the first semiconductor layer only at an output end of the laser, the monitor stripe is buried in the burying layer on which the contact layer is formed, and the active layer stripe and the monitor stripe are isolated electrically by an isolation groove. The width of the active layer stripe can be controlled easily based on the width of the active layer in the monitor stripe as a criterion.
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