发明名称 |
Magnetic memory unit and magnetic memory array |
摘要 |
A magnetic memory unit having a first magnetizable electrode, a second magnetizable electrode, and at least one nanotube arranged between the electrodes in a longitudinal direction and coupled to the first electrode by a first longitudinal end and to the second electrode by a second longitudinal end. A storage information item is stored in the memory unit in a nonvolatile fashion by setting a magnetization direction of one of the magnetizable electrodes by applying an external magnetic field. |
申请公布号 |
US6809361(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20040754910 |
申请日期 |
2004.01.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HONLEIN WOLFGANG;KREUPL FRANZ |
分类号 |
B82B1/00;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L29/06;H01L43/08;(IPC1-7):H01L31/062 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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