发明名称 Magnetic memory unit and magnetic memory array
摘要 A magnetic memory unit having a first magnetizable electrode, a second magnetizable electrode, and at least one nanotube arranged between the electrodes in a longitudinal direction and coupled to the first electrode by a first longitudinal end and to the second electrode by a second longitudinal end. A storage information item is stored in the memory unit in a nonvolatile fashion by setting a magnetization direction of one of the magnetizable electrodes by applying an external magnetic field.
申请公布号 US6809361(B2) 申请公布日期 2004.10.26
申请号 US20040754910 申请日期 2004.01.09
申请人 INFINEON TECHNOLOGIES AG 发明人 HONLEIN WOLFGANG;KREUPL FRANZ
分类号 B82B1/00;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L29/06;H01L43/08;(IPC1-7):H01L31/062 主分类号 B82B1/00
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