发明名称 Semiconductor device and method for fabricating the semiconductor device
摘要 The semiconductor device comprises an insulation layer formed on surfaces of semiconductor chips where the electrodes are formed, and a wiring layer formed on the insulation layer. The wiring layer formed on the insulation layer and the electrodes of the semiconductor chips are electrically connected to each other via connection members, such as wire bumps, etc. formed on the electrodes of the semiconductor chip.
申请公布号 US6808962(B2) 申请公布日期 2004.10.26
申请号 US20010917854 申请日期 2001.07.31
申请人 DAI NIPPON PRINTING CO., LTD. 发明人 TSUBOSAKI KUNIHIRO
分类号 H01L23/12;H01L23/485;(IPC1-7):H01L23/48 主分类号 H01L23/12
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