| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to effectively prevent moat by depositing additionally an oxide layer and a nitride layer on a gap-fill layer in order to bury the moat. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a silicon substrate(10). A trench(16) is formed by patterning the pad nitride layer and the pad oxide layer using an STI(Shallow Trench Isolation) mask. A gap-fill oxide layer is filled in the trench and planarized by CMP(Chemical Mechanical Polishing). The remaining pad nitride layer is removed. An oxide layer and a nitride layer are sequentially deposited on the resultant structure so as to bury a moat(B). By removing the nitride layer and the oxide layer, an isolation layer(18b) is then formed.
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