| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a light emitting diode element having a high luminance in the wavelength band of yellow-green, in which the drop in the output strength used to be marked conventionally, by forming a window layer in a process in which the temperature is higher than before in order to improve the electric conductivity of the window layer and by changing the structure thereof to prevent the changes due to the process under high temperatures. <P>SOLUTION: In a light emitting diode of a double-hetero type having an AlGaInP active layer, a clad layer on the positive electrode side is made up of an undoped AlInP layer that has grown to have a thickness of 0.5 μm or more and an intermediate layer having an energy band gap between the window layer and the undoped AlInP layer and to which a p-type doping has been conducted. In the above-mentioned window layer, a GaP layer grows at temperatures equal to 730°C or higher , the growth rate is equal to 7.8 μm per hour or greater, and the dopant is zinc. An undoped AlInP layer having a thickness of 0.1 μm or greater is attached to a clad layer on the negative electrode side. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
