发明名称 FABRICATING METHOD OF IC WAFER, AND FLIP-CHIP IC USING THE IC WAFER
摘要 PROBLEM TO BE SOLVED: To provide a fabricating method of an IC wafer and a flip-chip IC using the IC wafer, enabling the easy printing of print paste in each IC chip area relatively accurately on a barrier metal layer. SOLUTION: In the IC wafer having a multiplicity of IC chip areas on an upper surface and a plurality of barrier metal layers 3 in each IC chip area, when a printing mask having apertures corresponding to the barrier metal layers 3 disposed on the IC wafer, adjustment marks 5 for recognizing a position deviation amount between the apertures and the barrier metal layers are formed in the entire IC chip areas. Further, the flip-chip IC is fabricated by a process for adjusting the position relation between the IC wafer and the printing mask, according to the position deviation amount between the apertures and the barrier metal layers in each IC chip area, recognized by each adjustment mark, when positioning to the IC wafer a printing mask having a plurality of apertures corresponding to the barrier metal layers. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296943(A) 申请公布日期 2004.10.21
申请号 JP20030089398 申请日期 2003.03.27
申请人 KYOCERA CORP 发明人 SHIMOSEKI YOSHIO
分类号 H01L23/12;H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L23/12
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