发明名称 SOLID OXIDE ELECTROLYTE WITH ION CONDUCTIVITY ENHANCEMENT BY DISLOCATION
摘要 Dislocations (63) are fabricated into electrolyte membrane films (1) to increase ion conductivity. Ion and/or electron irradiation causes the growth of vacancy clusters within the thin film and collapsing into Frank dislocation loops (62) that exhibit high ion conductivity. Maximum ion conductivity is accomplished by spatially reorienting the Frank dislocation loops (62) during a following heat-treatment of the membrane. Thereby the dislocation loops (62) form surface-to-surface continuous dislocations along which ions may propagate between membrane surfaces with minimal activation energies. Dislocation densities in the range of 10<8> ~ 10<14> cm/cm<3> may be fabricated with conventional irradiation techniques into ceramics such as, for example yttria stabilized zirconia and doped ceria.
申请公布号 WO2004040670(A3) 申请公布日期 2004.10.21
申请号 WO2003US17432 申请日期 2003.05.29
申请人 THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY;HONDA GIKEN KOGYO KABUSHIKI KAISHA 发明人 SAITO, YUJI;PRINZ, FRITZ, B.;PARK, YONG-IL;O'HAYRE, RYAN
分类号 G01N27/41;B05D3/02;B05D5/12;B05D7/24;C04B35/486;C04B35/50;C04B41/00;C04B41/52;C04B41/89;G01N27/26;G01N27/407;G01N27/409;H01M8/02;H01M8/12 主分类号 G01N27/41
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